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Transmissive Photosensors (Photo lnterrupters)
CNA1011K (ON1113)
Photo lnterrupter
For contactless SW, object detection Overview
CNA1011K is a small size photocoupler package consisting of a high efficiency GaAs infrared light emitting diode used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element.
13.6 7.00.2 7.00.3 5.00.2 A 0.4 6.2 Mark for indicating LED side 1.5
Unit: mm
6.2
Device center 2.20.3 2.20.2
19.2 13.00.15 0.450.15
Features
* Highly precise position detection: 0.3 mm * Wide gap between emitting and detecting elements, suitable for thick plate detection * Fast response: tr , tf = 6 s (typ.) * Small output current variation against change in temperature
8.5
8.8 min.
A' (10.1)
2-3.20.2 4- 0.45 2-2.0 (2.54) SEC. A-A'
Absolute Maximum Ratings Ta = 25C
Parameter Input (Light Reverse voltage Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation *2 Temperature Operating ambient temperature Storage temperature emitting diode) Forward current Symbol VR IF PD VCEO VECO IC PC Topr Tstg Rating 3 50 75 30 5 20 100 -25 to +85 -30 to +100 Unit V mA mW V V mA mW C C
1: Anode 2: Cathode 3: Collector 4: Emitter 1 4 PISTR104-012 Package (Note) 1. Tolerance unless otherwise specified is 0.3 2. ( ) Dimension is reference
2 3
Note) *1: Input power derating ratio is 1.0 mW/C at Ta 25C. *2: Output power derating ratio is 1.34 mW/C at Ta 25C.
Electrical-Optical Characteristics Ta = 25C 3C
Parameter Input Forward voltage Terminal capacitance Output Collector-emitter cutoff current characteristics (Base open) Collector-emitter capacitance Transfer Collector current Rise time
*
Symbol VF IR Ct ICEO CC IC tr tf IF = 50 mA VR = 3 V
Conditions
Min
Typ 1.2 35
Max 1.5 10 200
Unit V A pF nA pF mA
characteristics Reverse current
VR = 0 V, f = 1 MHz VCE = 10 V VCE = 10 V, f = 1 MHz VCC = 10 V, IF = 20 mA, RL = 100 IF = 50 mA, IC = 0.1 mA VCC = 10 V, IC = 1 mA RL = 100 0.3
5 0.5 6 6
characteristics Collector-emitter saturation voltage VCE(sat) Fall time *
V s s
Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit
Sig. in VCC (Input pulse) (Output pulse) tr tf 90% 10% tr : Rise time tf : Fall time
Sig. out 50 RL
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004 SHG00018BED
1
CNA1011K
IF , I C T a
60 60 IF 50 50
IF V F
Ta = 25C 10
IC I F
VCE = 10 V Ta = 25C
Forward current IF , collector current IC (mA)
40
40
Collector current IC (mA)
Forward current IF (mA)
1
30 IC 20
30
10 -1
20
10 -2
10
10
0 -25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10 -3 10 -1
1
10
102
Ambient temperature Ta (C )
Forward voltage VF (V)
Forward current IF (mA)
VF T a
1.6 102
IC VCE
Ta = 25C 160
IC Ta
VCE = 10 V IF = 20 mA
Forward voltage VF (V)
1.2
Collector current IC (mA)
IF = 50 mA 10 mA 1 mA
10
Relative collector current IC (%)
102
120
IF = 30 mA 1 20 mA 10 mA 10 -1
0.8
80
0.4
40
0 -40
0
40
80
10 -2 10 -1
1
10
0 -40
0
40
80
Ambient temperature Ta (C )
Collector-emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO Ta
Collector-emitter cutoff current (Base open) ICEO (A)
10 103
tr I C
VCC = 10 V Ta = 25C 100
IC d
VCE = 5 V Ta = 25C IF = 20 mA Criterion 0 d 60
1 102 10 -1 VCE = 24 V 10 V
Relative collector current IC (%)
10
80
Rise time tr (s)
RL = 1 k 10 500 100
10 -2
40
1 10 -3
20
10 -4 -40
0
40
80
10 -1 10 -2
10 -1
1
0
0
1
2
3
4
5
6
Ambient temperature Ta (C )
Collector current IC (mA)
Distance d (mm)
2
SHG00018BED
Caution for Safety
This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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